《《射频磁控溅射沉积ITO薄膜性能及导电机理》》.pdf

16 4 2006 4 V ol. 16 N o . 4 The ChineseJournal of Nonferrous Metals A pr . 2006 : 1004 0609( 2006) 04 0688 06 ITO 李世涛, 乔学亮, 陈建国 ( , 430074) : In O SnO 1 1 , IT O 2 3 2 : TV IL , 0. 2 P aIT O T VIL ts , ts 200 , IT O TV IL 90 %( ) , 13 . 1 3 , : IT O , Cottey dc 48~ 54 nm, A FM IT O : IT O ; ; ; ; : T N 304. 0255 ; O 484. 4 : A Properties and conductivity mechanism of ITOfilms prepared by r.f. magnetron sputtering L I Shit ao, QIA O Xueliang , CH EN Jianguo ( Stat e Key L aborat ory of Die and Mo uld T echno logy , H uazho ng U niversit y of Science and T echnolog y, Wuhan 430074 , China) Abstract: T he hig h quality IT O thin f ilm s w ere prepared at diff erent temper atures by r . f . mag netr on sputter ing. T he results sho w that A r par tial pr essure ( p ( Ar ) ) has an impor tant influence on the conductance and t ransm ission in visible range ( TV IL ) . T he optimal p ( A r ) is 0 . 2 Pa ascer tained by ex per iments . T he sheet resistance, TV IL and co lo r of IT O f ilm s depend on the f ilm thickness . T he f ilm pro per ties can be impro ved by elev ating substrat e temper ature ( t ) . Fo r instance t he f ilm s w ith T lar ger than 90 % and