GaN HEMT器件.pdf

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo Citation: Applied Physics Letters 76, 121 (2000); doi: 10.1063/1.125676 View online: /10.1063/1.125676 View Table of Contents: /content/aip/journal/apl/76/1?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High-power AlGaN ∕ InGaN ∕ AlGaN ∕ GaN recessed gate heterostructure field-effect transistors Appl. Phys. Lett. 86, 143512 (2005); 10.1063/1.1886902 Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC Appl. Phys. Lett. 81, 3073 (2002); 10.1063/1.1512820 Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 78, 3088 (2001); 10.1063/1.1372620 Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors Appl. Phys. Lett. 78, 2896 (2001); 10.1063/1.1367274 Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor Appl. Phys. Lett. 74, 3890 (1999); 10.1063/1.124214 Reuse of AIP Publishing content is subject to the terms at: /authors/rights-and-permissions. Download to IP: 53 On: Sat, 02 Jul 2016 02:40:49 APPLIED PHYSICS LETTERS VOLUME 76, NUMBER 1 3 JANUARY 2000 Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire T. Egawa,a) H. Ishikawa, and M. Umen