宽禁带半导体功率器件在现代雷达中的应用_周万幸.pdf

3212Vo.l32No.12

201012

ModernRadarDec.2010

·专家论坛·:TN959.74;TN957.52:A:1004-7859(2010)12-0001-06

周万幸

(南京电子技术研究所,南京210039)

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ApplicationofWideand-gapSemiconductorPower

DevicesinModernRadar

ZHOUWan-xing

(NanjingResearchInstituteofElectronicsTechnology,Nanjing210039,China)

Abstrac:tWiththeincreasingrequirementsofradarperformancesinmodernwarandtherapiddevelopmentofbasicmaterial,s

manufacturingtechnologyanddevice,sresearchanddesignofradartechnologyhaveachievedcontinuousprogress.Theappearance

ofwideband-gapsemiconductorspowerdevicesmakeitpossiblethattheradartransmitterandwholesystemperformanceswillbe

improvedbyalargeleve.lInthispape,rthetightrequirementsoflargepowertoradartransmitterarefirstlyintroduced,andthen

thecurrentstateofwideband-gapsemiconductorsdevicesisgivenbymeansofintroducingitsdetailedcharacteristics.Ultimately,

developmentandapplicationtrendsofwideband-gapdevicesarebroughtforward.

Keywords:rada;rwideband-gapsemiconductorspowerdevices;transmitter

0引言

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1现代雷达对大功率发射机的需求