肖特基二极管概要.doc

肖特基二极管简介 肖特基二极管（SBD）是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称，是以其发明人肖特基博士（Schottky）命名的半导体器件。肖特基二极管是低功耗、大电流、超高速半导体器件，它不是利用P型半导体与N型半导体接触形成PN结原理制作的，而是利用金属与半导体接触形成的金属－半导体结原理制作的。因此，SBD也称为金属－半导体（接触）二极管或表面势垒二极管，它是一种热载流子二极管。 Schottky diode is a metal semiconductor device, which is formed on the surface of the two electrode, which is made of N (B) A as the cathode, and the potential barrier is formed on the contact surface. Because there are a lot of electrons in the N type semiconductor, there is only a very small amount of free electrons in the precious metal, so the electron diffusion from the B to the low concentration of A. It is clear that there is no hole in the metal A, and there is no diffusion motion of the hole from the A to the B. With the electrons from B to A, the surface electron concentration of B gradually decreases, the surface of the neutral is destroyed, so the barrier is formed, and the electric field direction is A B. But under the action of electric field, the electrons in a will produce drift movement from a to B, thus weaken the due to diffusive motion and the formation of the electric field. When the space charge region of a certain width is set up, the electron drift caused by the electric field and the concentration of the electron diffusion motion caused by the different concentration of the electric field can reach the equilibrium, and Schottky barrier.The internal circuit structure of the Schottky diode is typical of the internal structure of the Schottky rectifier tube is a N type semiconductor as the substrate, and the formation of the N- epitaxial layer is formed on the surface of arsenic. The anode is made of a material such as molybdenum or aluminum. Using silicon dioxide (SiO2) to remove the electric field in the edge region and increase the pressure value of the tube. The H- type substrate has a very small on state resistance, and the doping concentration is 100% times higher than that of the N layer. The N+ cathode layer is formed on