半导体量子器件物理讲座第二讲高电子迁移率晶体管HEMT.pdf

　 半导体量子器件物理讲座 ＊ 　(HEMT) 王　良　臣 (　　100083) 　　　, .HEMT 、I-V . 　　, , HIGH ELECTRON MOBILITY TRANSISTORS WANG Liang-Chen (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 　100083, China ) Abstract　　Assuming the formation of a two-dimensional electron gas in a triangular otential well at the heterointerin- face we calculate both the quantized energy level and the interface sheet electron concentration.O timization of high the electron mobility transistors, the charge control model and the current-voltage characteristics of these transistors are then analyzed. Key words 　　2DEG, HEMT, otential well . 1　 2DEG , 2DEG . [1] 1960 , (Anderson) HEMT 、 .1969 , Easki Tsu [2] , , . ., , . 2　(HEMT) , .1978 , [3] Dingle ., GaAs 2.1　 n-AlGaAs, N-AlGaAs GaAs [4] .AlGaAs GaAs ( , (2DEG) , .1980 , GaAs n-Alx Eg Al0.22Ga0.78As=1.70eV, Eg GaAs = 1.42eV, ΔEg = [5] Ga1-xAs , 0.28eV). (HEMT ). , N-AlGaAs , MBE MOCVD GaAs , AlGaAs . , , AlGaAs , GaAs HEMT .HEMT 、、、 , , ＊　2000-03-30 , 2000-11-24 30 (2001 )4