基于石墨烯通道的场效应晶体管的可制造性研究-机械设计及理论专业论文.docx

万方数据 万方数据 摘 要 摘 要 晶体管是计算机高速运行的保障，晶体管技术的发展推动了计算机产业的革 命，摩尔定律则间接推动了整个半导体行业的发展。现有的加工工艺已经发挥到 了较高的阶段，传统材料极限无法突破，亟待更优良的新型材料出现来推动半导 体产业发展。石墨烯材料作为近几年研究的热门材料，其拥有独特的电学及物理 性质，它是只有一个碳原子厚度的二维材料，有着运算度快和体积小的双重优点， 应用前景广泛。 石墨烯晶体管的成功研发能够再延续摩尔定律经典。本文通过使用半导体工 艺器件仿真软件 TCAD 进行器件的制造工艺和性能仿真，通过调研和分析，设计 了该器件的制造工艺流程以及确定工艺参数，以这个器件模型为基础来研究基于 石墨烯界面层的场效应晶体管的制造工艺和性能，通过对工艺数据的可控性修改 得到一个合乎实际的模型。该 FET 基于 SiC 基底生长，省略了石墨烯从基底上转 移的工艺，大大减少了可能引入杂质等问题，其制造的晶体管速度提升快，潜力 巨大，仿真得到的 IV 特性以及特征频率等性能参数显示这种新型晶体管的高频率 特性，都证明了石墨烯场效应晶体管的开发潜力是相当巨大的。 关键词：石墨烯，场效应晶体管，TCAD， 制造工艺，性能仿真 I ABSTRACT ABSTRACT Transistor is a key active component of modern electronics, and it promotes the evolution of modern electronics, especially in computer technology. As a kind of traditional materials of interfacial layer, SiO2 became the obstacle of computing speed improvement. And its processing limit determined that the thickness of SiO2 interfacial layer is hard to be reduced to 5 nm. Recently fellows discovered a brand new carbon allotrope, named graphene, which has a broad application prospects. It is a two dimension thin film, owning excellent characteristics in electronic and physical properties, and the thickness of single layer graphene is only 0.33 nm. This paper discussed the process and device performance of graphene MOSFET by semiconductor simulation software- Technology Computer Aided Design (TCAD), which is applied to study the manufacture process and device performance of graphene based MOSFET, and get a reasonable model by adjust the controllable process parameters. The transistor model is based on the SiC substrate for omitting the transfer step so that to reduce the problems of bringing in impurities. The graphene based transistor is improving quickly for it contains a great potential in development of the calculation speed of transistors. Fellows believe that graphene MOSFET must be a highlight to continue the legend of Moore’s Law. The performance results of simulation in current-voltage and characteristic frequency parameter