VDMOS场效应晶体管的研究与进展_.pdf

第29 卷　第1 期 电 子 器 件 V ol. 29　No. 1 2006 年3 月 　　　 Chinese Journal Of Elect ron Dev ices 　　 Mar. 2006 Research and Progress of VDMOS Field-Effect Transistor CHEN Long ,SHEN Ke-qiang (TheKey Laboratory of MEMS of The E ducation Ministry , Southeast University , Nanj ing 210096, China) Abstract:The general situation and working principle of VDM S Field-Effect Transistor are introduced. The features and advantages of this new generation of power electronics devices are presented. The theory and technology breakthroughs of the VDM S Field-Effect Transistor in recent years are concluded, which focus on low voltage and high voltage power M SFETs. The excellent performance is realized by the ad- vanced trench and package technology, and the limit line of silicon for high voltage have been broken through the using of a new structure named Superjunction and a new SiC material. In the end, the VD- M S development and prospect are explored. Keywords:VDM S;specific on-resistance;trench;superjunction EEACC:2 60P VDMOS 陈　龙, 沈克强 (MEMS , 210096) VDM S , , 　: VDM S , , Superjunction 、SiC Si 。。 :VDM S;;;Superjunction :TN432 　　 :A　　:100-9490(2006)01-0290-06 　　M S M S ,。VD- , M S 1979 H. W. Collins , [1] 。 。 VDM S (Vertical M S 。 Double - diffused Metal xide Semiconductor) M S , M SFET 。 。20 , 、、、 VDM S 。M S 、, 。, [2] 、、、, 、 , 、、、、 M SFET 。 [1- 3] 、 。 CPU , M SFET 1957 ;, :2005-05-25 :　(1980-), , ,longcmems@; (1960-), 。 第1期 陈　龙, 沈克强等:VDM S 场效应晶体管的研 与进展 29