HYG190ND04LR1C2++datasheet+V1.0深圳恒锐丰科技.pdf

HYG190ND04LR1C2Microelectronics

DualN-ChannelEnhancementModeMOSFET

FeaturePinDescription

40V/33A

RDS(ON)=17mΩ(typ.)@VGS=10V

RDS(ON)=20mΩ(typ.)@VGS=4.5V

100%AvalancheTested

100%DVDS

ReliableandRugged

PDFN8L(5x6)

HalogenFreeandGreenDevicesAvailablePin1

(RoHSCompliant)

D1D2

Applications

DC-DC

G1G2

MotorcontrolS1S2

DualN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

C2C2:PDFN8L(5x6)

HYG190ND04

XYMXXXXXX

DateCode

XYMXXXXXX

Note:HUAYIhalogenfreeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIhalogenfreeproductsmeetorexceedthehalogenfree

require-mentsofIPC/JEDECJ-STD-020forMSLclassificationathalogenfreepeakreflowtemperature.HUAYI

defines“Green”tomeanhalogenfree(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmby

weightinhomogeneousmaterialandtotalofBrandCldoesnotexceed1500p