HYG170ND03LR1C2++datasheet V1.0深圳恒锐丰科技.pdf

HYG170ND03LR1C2

DualN-ChannelEnhancementModeMOSFET

FeaturePinDescription

30V/23A

RDS(ON)15.2mΩ(typ.)@VGS10V

RDS(ON)21.8mΩ(typ.)@VGS4.5V

100%AvalancheTested

ReliableandRugged

HalogenFreeandGreenDevicesAvailable

(RoHSCompliant)PDFN8L(5x6)

Applications

SwitchingApplication

PowerManagementforDC/DC

DualN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

C2C2:PDFN8L(5x6)

G170ND03

XXXYWXXXXXDateCode

XXXYWXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.0

1

HYG170ND03LR1C2

AbsoluteMaximumRatings

SymbolParameterRatingUnit

CommonRatings(Tc25°CUnlessOtherwiseNot