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HYG090ND06LS1C2++datasheet V1.0深圳恒锐丰科技.pdf

发布：2024-10-18约2.28万字共9页下载文档
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HYG090ND06LS1C2

DualN-ChannelEnhancementModeMOSFET

FeaturePinDescription

60V/56A

RDS(ON)=8.0mΩ(typ.)@VGS=10V

RDS(ON)=12.2mΩ(typ.)@VGS=4.5V

100%AvalancheTested

ReliableandRugged

HalogenFreeandGreenDevicesAvailable

PIN1

(RoHSCompliant)PDFN8L(5x6)

Applications

SwitchingApplication

PowerManagementforDC/DC

DualN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

C2C2:PDFN8L(5x6)

G090ND06

XXXYWXXXXXDateCode

XXXYWXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines

“Green”tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightin

homogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.0

1

HYG090ND06LS1C2

AbsoluteMaximumRatings

SymbolP

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