文档详情

HYG045P03LQ2PB++datasheet+V1.0深圳恒锐丰科技.pdf

发布：2024-10-18约4.74万字共10页下载文档
文本预览下载声明

HYG045P03LQ2P/BMicroelectronics

P-ChannelEnhancementModeMOSFET

FeaturePinDescription

-30V/-131A

RDS(ON)=4.1mΩ(typ.)@VGS=-10V

RDS(ON)=6.4mΩ(typ.)@VGS=-4.5V

100%AvalancheTested

100%DVDS

ReliableandRugged

TO-220FB-3LTO-263-2L

HalogenFreeandGreenDevicesAvailable

(RoHSCompliant)

ApplicationsD

Switchingapplication

Li-batteryprotection

DC-DCG

S

SingleP-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

PBP:TO-220FB-3LB:TO-263-2L

HYG045P03HYG045P03

XYMXXXXXXXYMXXXXXXDateCode

XYMXXXXXX

Note:HUAYIhalogenfreeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIhalogenfreeproductsmeetorexceedthehalogenfree

require-mentsofIPC/JEDECJ-STD-020forMSLclassificationathalogenfreepeakreflowtemperature.HUAYI

defines“Green”tomeanhalogenfree(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmby

weightinhomogeneousmaterialandtotalofBrandCldoesnotexceed

显示全部
相似文档