《Properties of Sn-doped Bi2Te3- xSex single crystals》.pdf

ISSN 0020-1685, Inorganic Materials, 2006, Vol. 42, No. 2, pp. 101–107. © Pleiades Publishing, Inc., 2006. Original Russian Text © T.E. Svechnikova, V.S. Zemskov, M.K. Zhitinskaya, S.A. Nemov, N.V. Polikarpova, E. Müller, D. Platzek, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 2, pp. 135–142. Properties of Sn-Doped Bi Te Se Single Crystals 2 3 – x x T. E. Svechnikova*, V. S. Zemskov*, M. K. Zhitinskaya**, S. A. Nemov**, N. V. Polikarpova*, E. Müller***, and D. Platzek*** * Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Leninskii pr. 49, Moscow, 119991 Russia ** St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251 Russia *** Institute of Materials Research, German Aerospace Center DLR, D-51170 Köln, Germany e-mail: svechn@online.ru Received February 9, 2005; in final form, May 17, 2005 Abstract—The effect of Sn doping (0.2 and 0.4 at %) on the properties of Czochralski-grown single crystals of n-type Bi Te Se solid solutions is studied. Thermoelectric power, electrical conductivity, thermal con- 2 2.85 0.15 ductivity, and Hall effect measurements in the range 77–400 K demonstrate that Sn doping has a significant effect on the transport properties of the solid solutions. Between 300 and 370 K, the thermoelectric figure of merit of Bi1.996Sn0.004Te2.85Se0.15 single crystals is higher than that of the Sn-free solid solution. In addition, hot-microprobe thermoelectric power measurem