4H_SiC低压热壁CVD同质外延生长及特性_英文_.pdf

　第 25 卷第 12 期 半　导　体　学　报 . 25, . 12 V o l N o 　2004 年 12 月 . , 2004 CH IN E SE JOU RN AL O F SEM ICON DU CTO R S D ec 4 - Hom oep itax ia l Growth an d Character iza t ion of H SiC Ep ilayer s - - by L ow Pressure Hot W a ll Chem ica l Vapor D eposit ion Sun Guo sh en g , Gao X in , Zh an g Yon gx in g , W an g L ei, Zh ao W an shun , Zen g Y ip in g an d L i J inm in ( , , N ov el S em icond uctor M a ter ia l L abora tory I ns titu te of S em icond uctors T he Ch inese A cad emy of S ciences, B eij ing 　100083, Ch ina) : ( ) Abstract H o r izon ta l a ir coo led low p re ssu re ho t w a ll CVD L P HW CVD sy stem is deve lop ed to get h igh ly qu a lit 4 . 4 ( 000 1) 4 ica l H SiC ep ilayer s H om o ep itax ia l grow th o f H SiC on o ff o r ien ted Si face