大功率垂直腔底发射半导体激光器的光束质量_崔锦江.pdf

38 1 Vol. 38, No. 1 2011 1 CHINESEJOURNAL OF LASERS January, 2011 大功率垂直腔底发射半导体激光器的光束质量 1 2 1 1 1 2 2 1 1 崔锦江 宁永强 姜琛昱 王 帆 高 静 张 星 王贞福 武晓东 檀慧明 1 , 215163 2 , 130033 2 M , , (VCSEL) , 4 A 2 1 kW/ cm 4 4 , ; ; ; TN248. 4 A doi: 10.3788/ CJL201138.0102002 Beam Quality of High Power VerticalCavity BottomEmitting Semiconductor Lasers 1 2 1 1 1 Cui Jinjiang Ning Yongqiang Jiang Chenyu Wang Fan aoJing 2 2 1 1 Zhang Xing Wang Zhenfu Wu Xiaodong Tan Huiming 1Su z ou Instit ut e of Biom edical En gin eerin g an d Tec nology , Suz ou , J iangsu 215163, C in a 2 C an gc u n In st itu te of Optics , Fin e Mec an ics an d P ysics , C in ese Academ y of Scien ces , C angc un , Jilin 130033, C ina 2 Abstract Research on the beam quality of highpower bottomemitting laserdiode fromthe M factor, the far field divergence angle, near fieldandfarfieldintensity distribution is done. Analysis of different device parameters onthe beam quality is also made. Vertical cavity surface emitting laser (VCSEL) array with a novel arrangement is designed. By the modulation of the aperture size and the centre spacing of the units, high power density up to 2 1 kW/ cm andgoodbeamproperty of aussian farfield distribution at 4 A injecting current are