多栅指结构gan基场效应晶体管器件工艺及版图设计+电子科学与技术 大学论文.doc

学号： 14112500128 毕业设计 题 目： 多栅指结构GaN基场效应晶体管器件工艺及版图设计 作 者 吴珍珍 届 别 2015 院 部 物理与电子学院 专 业 电子科学与技术 指导老师 文于华 职 称 讲师 完成时间 2015.05  摘 要 宽禁带半导体材料一般是定义为禁带宽度大于或等于2.3eV的半导体材料。氮化镓(GaN)是近些年发展起来并得到广泛应用的宽禁带半导体材料之一，该材料具有禁带宽度大、热导率高、介电常数低、电子漂移饱和速度高等特性，在制作高温、高频、高功率以及制作抗辐射的电子器件方面有很大的优势，由于氮化镓的宽禁带的特点，还能制作紫外光、绿光以及蓝光等光电子器件。基于该材料的优点及其器件的应用前景，本论文主要围绕多栅指结构GaN基场效应晶体管器件工艺及版图设计这两方面展开了以下具体工作： 1）调研多栅指结构GaN基场效应晶体管器件的工作原理和基本特性,掌握制作该器件工艺的关键技术； 2）运用Tanner L-EDIT版图设计软件设计出AlGaN/GaN HFET的版图模型以达到预期目的。 以GaN为代表的Ⅲ族氮化物半导体材料，因其应用前景诱人以及巨大的市场潜力必定会引起激烈的市场竞争。所以研发多栅指结构GaN基场效应晶体管器件就成了科学家抢占高技术领域的战略制高点的关键。 氮化镓场效应晶体管工艺版图宽禁带电子器件  Abstract Wide band gap semiconductor materials are generally defined as semiconductor materials with a band gap greater than or equal to 2.3eV. Gallium nitride (GAN) is developed in recent years and has been one of the widely used wide band gap semiconductor material. The material has a large band gap and thermal conductivity of high, low dielectric constant, saturated electron drift high speed characteristics, has a great advantage in the production of high-temperature, high-frequency, high power and making of anti radiation of electronic devices, due to the characteristics of Gan wide band gap, and can make UV, green and blue laser optoelectronic devices. Based on the application of the advantages of the materials and devices, this paper mainly focus on multi gate structure GaN based field effect transistor device process and layout design of the following specific work： 1) research on the principle and basic characteristics of the multi gate finger structure GaN based field effect transistor device, and master the key technology of the device technology； 2) the layout model of HFET AlGaN/GaN is designed by L-EDIT Tanner layout software to achieve the expected goal. The nitride semiconductor material represented by GaN, because of its potential applications and huge market potential, will inevitably lead to fierc