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纳米材料和纳米结构第09讲-纳米图案化技术.ppt

发布:2018-11-24约1.31千字共33页下载文档
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纳米结构和纳米材料; 1 Introduction Enormous Achievement Obtained by Microelectronics(微电子取得了巨大的成就);Similar to traditional optical lithography, nanolithography also consists of three parts: (与传统光学印刷术相同的是:纳米光刻也包括3部分);?;In EBL nanofabrication, working conditions at which electron scattering;2-1-1EBLMachine;Three essential parts of an EBL equipment: an electron gun, a vacuum system, and a control system(电子刻蚀仪的3个重要组成:电子枪,真空系统、控制系统);2-1-2 E-beam Resists(电子束反蚀剂);电子束反蚀剂;A necessary process to transfer the EBL-made pattern from the resist;图案转移过程;TheLift-offprocessflow;AnundercutprofileinPMMAresist;TheElectroplatingProcessflow;SubtractivePatternTransferProcess;Advantages of X-ray energy source and XRL;X射线刻蚀;Typical schematic diagrams of XRL system (1);Typical schematic diagrams of XRL system (2);Mask Fabrication:;AgoldadditiveprocessforX-raymaskfabrication;Resist requirement(反蚀剂要求);2-3 Extreme Ultraviolet Lithography (EUVL); 3 Examples of Artificial Patterned Nanostructures(人工纳米结构图案技术的例子);Binary;Grating with 60 nm period, 12 nm lines of W on silicon;EBL generated hexagons;EBL generated fine Au-Pd 30 nm wires;EBL generated;XRL generated 75 nm lines and spaces;Cross-sectional profiles of EUVL generated;Cross-sectional resist images of 80 nm lines and spaces by EUVL;Thank You for Your Attention
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