synthesis and characterization of zno nanowires by thermal oxidation of zn thin films at various temperatures氧化锌纳米线的合成和表征热氧化锌薄膜在不同的温度.pdf

Molecules 2012, 17, 5021-5029; doi:10.3390/molecule OPEN ACCESS molecules ISSN 1420-3049 /journal/molecules Article Synthesis and Characterization of ZnO Nanowires by Thermal Oxidation of Zn Thin Films at Various Temperatures Mohammad Reza Khanlary *, Vahid Vahedi and Ali Reyhani Physics Department of Imam Khomeini International University, Qazvin, 34149-16818, Iran; E-Mails: vahedi_vahid@ (V.V.); reyhani@ (A.R.) * Author to whom correspondence should be addressed; E-Mail: Khanlary@; Tel. /Fax: +98-281-378-0040. Received: 29 February 2012; in revised form: 16 April 2012 / Accepted: 28 April 2012 / Published: 2 May 2012 Abstract: In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. S