一种高性能cmos带隙基准源的设计与研究（毕业论文）.doc

摘 要 PAGE I PAGE 1 摘要 在模拟及数模混合集成电路设计中，电压基准是非常重要的电路模块之一，而通过巧妙设计的带隙电压基准更是以其与电源电压、工艺、温度变化几乎无关的特点，广泛应用在LDO及DC-DC集成稳压器、射频电路、高精度A／D和D／A转换器等多种集成电路中。 随着大规模集成电路的日益复杂和精密，亦对带隙基准电压的温度稳定性提出了更高的要求。传统的带系基准电压源只能产生固定的近似1.2V的电压不能满足在低压场合的应用。电流模带隙电路采用正温度系数的电流支路(PTAT)和负温度系数的电流支路(CTAT)并联产生与温度无关的基准电流。然后让此电流在电阻上产生基准电压。电流模带隙结构可以得到任意大小的基准电压。 本次设计的低压二次温度补偿高精度带隙基准电压源使用的工艺是TSMC 0.18μm 混合模拟CMOS 工艺，输出基准电压可调节，设计预期指标：温度系数10ppm/℃，电源抑制比在低频时接近80dB，高频时也能达到45dB，电源电压范围为1.5V到2.4V。 关键词：带隙基准源；二次温度补偿；温度系数；电源抑制比 ABSTRACT PAGE II A Low-voltage and High precision CMOS bandgap reference design In the design analog and digital mix-mode circuits, bandgap reference is one mode of the most important circuits. And the bandgap voltage references which through clever design are also with its power supply voltage, process, with the characteristics of temperature change almost irrelevant, widely used in LDO and DC - DC integrated voltage stabilizer, RF circuit, high-precision A/D and D/A converter and so on many kinds of integrated circuits. Along with large scale integrated circuit of the increasingly complex and precision, also bandgap benchmark voltage temperature stability put forward higher request. The traditional belt department benchmark voltage source produces fixed approximate 1.2V, cannot satisfy the voltage in the application of low-pressure occasions. Current mode bandgap circuit USES is the temperature coefficient of current branch and negative temperature coefficient of current branch regardless of temperature of parallel produce benchmark current. Then let the current benchmark voltage produce in the resistance. Current mode bandgap structure can get any size benchmark voltage The design of low-pressure second temperature compensation high-precision bandgap voltage sources used benchmark craft is TSMC 0.18 um hybrid analog-digital craft, Output benchmark voltage can be adjusted, Temperature coefficient is 9ppm/℃, Power Supply Rejection Ratio can be