MEM12N60-E3.0微盟原厂规格书.pdf

MEM1260 N-CHANNEL POWER MOSFET MEM12N60 General Description Features The MEM12N60 is a high voltage and high curren ● 600V，12A t power MOSFET, designed to have better ● RDS(ON)=0.7Ω@VGS=10V characteristics, such as fast switching time, low gate ● LOW Crss charge, low on-state resistance and have a high ● Fast Switching rugged avalanche characteristics. This power ● Avalanche energy specified MOSFET is usually used at high speed switching ● Package ：TO220-F applications in powersupplies, PWM motor controls, 5 0 high efficient DC to DC converters and bridge circuits Pin Configuration 3 3 . 1 Pin Configuration 5 3 2 8 3 1 : L L A MEM12N60A3G C Maximum Ratings(Ta=25℃) Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 600V V Gate-Source Voltage VGSS ±30 V T =25℃ 12 ▲ Drain A ID A Current T =100℃