MEM2302XG-N_E3.0微盟原厂规格书.pdf

MEM2302-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel  20V/3A enhancement mode field-effect transistor These RDS(ON), Vgs@2.5V, Ids@2.8A = 42mΩ miniature surface mount MOSFETs utilize High RDS(ON), Vgs@4.5V, Ids@3A =35mΩ Cell Density process. Low RDS(ON) assures  High Density Cell Design For Ultra Low On-Resistance minimal power loss and conserves energy,  High power and current handling capability making this device ideal for use in power  Low side high current DC-DC Converter applications management circuitry. Typical applications are  Subminiature surface mount package:SOT23 DC-DC converters, power management in portable and battery-powered products such as 5 computers, printers, battery charger, 0 telecommunication power system, and 3 telephones power system. 3 1 5 Pin Configuration Typical Application 3  Battery management 2 8 High speed switch 3  Low power DC to DC converter 1 : L L A C Absolute Maximum Ratings (TA = 25 ℃unless otherwise noted) Parameter Symbol