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MEM8N60-E3.0微盟原厂规格书.pdf

发布：2020-03-16约1.49万字共7页下载文档

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MEM8N60 N-CHANNEL POWER MOSFET MEM8N60 General Description Features The MEM8N60 is a high voltage and high current p ● 600V，7.5A ower MOSFET, designed to have better characteristics, ● RDS(ON)=1.2Ω@VGS=10V such as fast switching time, low gate charge, low on- ● LOW CRSS state resistance and have a high rugged avalanche ● Fast Switching ● Avalanche energy specified characteristics. This powerMOSFET is usually used at ● Package ：TO220-F high speed switching applications in powersupplies, PWM motor controls, high efficient DC to DC converter 5 0 s and bridge circuits. Pin Configuration 3 3 Pin Configuration 1 5 3 2 8 3 1 : L L A MEM8N60A3G Maximum Ratings(Ta=25℃) C Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 600V V Gate-Source Voltage VGSS ±30 V T =25℃ 7.5

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