低功耗CMOS射频低噪声放大器的设计.pdf

第 32 卷 　第 1 期 电 子 器 件 Vol . 32 　N o . 1 2009 年 2 月 　　　 Chinese J our nal Of Elect r on Devices 　　 Feb . 2009 Design of LowPower CMOS RF Low Noise Ampl if ier W U J i anf eng , QI N H uibi n , H UA N G H aiy un , Z H E N G L i ang ( ) I ns t it ute of N ew E lect ron D ev ices , H ang z hou D i anz i Uni vers ity , H ang z hou 3 100 18 , Chi na Abstract :A 2 . 1 GHz low noise amplifier (LNA ) intended for u se in wireless communication receiver , has been μ ( ) implemented in Chartered 0 . 25 m CMOS p rocess. The amplifier p rovides a forward gain s2 1 of 2 1. 63 dB wit h a noise figure of only 2 . 1 dB , while drawing 12 . 5 mW from a 2 . 5 V supply . A detailed analysis of t he LNA circuit is p resented in t he p ap er , the noise figure is 2 . 1 dB and 1dB comp ress point is - 19 . 054 1 dBm. The chip area is 0 . 8 mm ×0 . 6 mm . The test result s reach t he design specifications and show good consistence. Key words :R F int egrat ed circuit s ;low noi se amp lifier ;noi se figure ;linearit y EEACC :2570D ;1220 低功耗 CMOS 射频低噪声放大器的设计 吴建锋 ,秦会斌 ,黄海云 ,郑 　梁 (杭州电子科技大学新型电子器件研究所 ,杭州 3 100 18) ( ) μ 摘 　要 :介绍了一个针对无线通讯应用的2 . 1 GHz 低噪声放大器 L N A 的设计 。该电路采用 Chart ered 0 . 25 m CMO S 工 艺 , 电源电压为 2 . 5 V ,设计中使用了多个电感 ,