SOI衬底和n~+衬底上SiGe HBT的研制.pdf

第 30 卷 　第 5 期 电 子 器 件 Vol. 30 　No . 5 20 07 年 10 月 　　　 Ch inese J ou r nal Of Elect ro n D evices 　　 Oct . 2 007 The Fabr ica t ion of i Ge HBT on O I an d n + 2 i u bstra te 3 3 YAO F ei , XU E Chu n2l ai , C H E N G B u2w en , WA N G Q i2m i ng ( t a te Key L ab or a t or y on I nt e gr a t e d Opt oe le ct r oni cs , In st it ut e of emic on du ct ors , Chi ne se A ca demy of c iences , Be ij in g 100083 , Chi n a) Abstr act : i Ge/ i epi ta xy l ayer s wer e grown on a n + 2 i and a O I sub st r ate b y t he U l t ra High V acu um/ Chemical V apor Depo sit io n (U HV/ CVD) sy stem r esp ectively , an d i Ge/ i HB T s ( H et er o st ruct ur e Bip olar ) μ Tr an si st or s w er e f abr icat ed wi t h 2 m p r ocess . The device p erforma nce wa s te sted by t r an sist or testin g ap 2 p arat us . The re sul t s show ed t hat t he i Ge HB T s on t he O I sub st r at e wit h D C gain βhigher t h an 3 00 w er e obt ai ned ,bu t device s on t he O I sub st r ate show n hi ghe r self2heati ng effect t h an device s on n + su b2 str at e . A hi gh er t u rn2on vol tage wa s shown i n i Ge HB T s wit h Al elect ro d es t han t ho se wit h TiAu elec2 t r o des. Th e D C char acter ist ics of i Ge HB T s wi t h differ ent el ect ro de mat erial s on diff er ent su b st r ates w er e t est ed an d comp ar ed an d t h e r ea so ns of t he differ ence w ere a naly sed. Key wor ds : i2based semiconductor device ; i Ge HB T ; OI sub st rate ; eleccto de ; char acteri stic curves ; DC gain β E EACC :255 0 ;25 60J O I 衬 底 和 n + 衬 底 上 i Ge HBT 的 研 制 3