模拟电路设计第2章.ppt

STEP01STEP02Chapter2BasicMOSDevicePhysics

MOSDeviceStructure

NMOSandPMOSwithWell

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MOSChannelFormation

I/VCharacteristics

I/VCharacteristics

I/VCharacteristics(cont.)

I/VCharacteristics(cont.)

OperationinTriodeRegion

OperationinActive(Saturation)Region

ActiveRegion(cont.)ActiveRegion

Transconductance,gm

ActiveActiveTriodeandActiveRegionTransition

ThresholdVoltageandBodyEffect

ThresholdVoltageandBodyEffect(cont.)NoBodyEffectWithBodyEffect

ChannelLengthModulationLL’

ChannelLengthModulation(cont.)

SubthresholdConduction

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DeviceCapacitances

LayoutforLowCapacitance

G-SandG-DCapacitance

MOSSmallSignalModels

BulkTransconductance,gmb

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MOSSmallSignalModelwithCapacitance

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