CVD化学及薄膜工艺2040223.ppt
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化学气相淀积与薄膜工艺Chemical Vapor Deposition Thin Film Technology
孟广耀
Tel:3603234 Fax:3607627
mgym@ustc.edu.cn
中国科学技术大学 材料科学与工程系
固体化学与无机膜研究所
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Ch.3 化学气相淀积系统中的质量输运 - 原理和和技术
3。1 CVD系统中物质输运过程及其作用
3。2 气体的一些性质
(1)气态方程
(2)输运性质
3。3开管气流系统中的质量输运
(1)水平反应管中的气流状态
(2)气态组分向生长表面的转移
(3)实例:Ga – HCl- NH3-H2 体系
3。4 封管系统中的质量输运
(1)系统总压和输运机制
(2)输运速率的计算
(3)实验验证
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前驱物气体
衬底
托架
卧式反应器
衬底
立式反应器
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气相外延砷化镓单晶薄膜
Reaction system: Ga – AsCl3 – H2
Ga source AsCl3 + 3/2H2 = 1/4 As4 + 3 HCl
reactions: Ga + HCl = GaCl + H2
Deposition: 1/4 As4 + GaCl + 1/2 H2 = GaAs + HCl
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SiHCl3+H2=Si+3HCl
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Low-Pressure CVD System
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Plasma-Enhanced CVD
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ECR-CVD(ECR: electron cyclotron resonance)
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PECVD (plasma enhanced CVD)
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LPCVD (low p
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