surface roughening of polystyrene and poly(methyl methacrylate) in aro2 plasma etching表面粗化的聚苯乙烯和聚(甲基丙烯酸甲酯)aro2等离子蚀刻.pdf

Polymers 2010, 2, 649-663; doi:10.3390/polym2040649 OPEN ACCESS polymers ISSN 2073-4360 /journal/polymers Article Surface Roughening of Polystyrene and Poly(methyl methacrylate) in Ar/O2 Plasma Etching 1 2 2 3 2 Yuk-Hong Ting , Chi-Chun Liu , Sang-Min Park , Hongquan Jiang , Paul F. Nealey and Amy E. Wendt 1,* 1 Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA; E-Mail: yting@ (Y.-H.T.) 2 Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA; E-Mails:cliu22@ (C.-C.L.); parknyh@ (S.-M.P.); nealey@ (P.F.N.) 3 Department of Materials Science and Engineering, University of Wisconsin -Madison, Madison, WI 53706, USA; E-Mail: Hongquan.Jiang@ (H.J.) * Author to whom correspondence should be addressed; E-Mail: wendt@; Tel.: +1-608-262-8407. Received: 2 September 2010; in revised form: 31 October 2010 / Accepted: 26 November 2010 / Published: 2 December 2010 Abstract: Selectively plasma-etched polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer masks present a promising alternative for subsequent nanoscale patterning of underlying films. Because mask roughness can be detrimental to pattern transfer, this study examines roughness formation, with a focus on the role of cross-linking, during plasma etching of PS and P