SiC单晶生长炉温度场有限元分析及模拟.pdf

第22 卷 第11 期 重 庆 工 学 院 学 报( 自然科学) 2008 年11 月 Vol. 22 No. 11 Journ l of Chongqing Institute of Technology(N tur l Science) Nov. 2008 SiC 徐 伟, 刘雪绞 ( , 030024) : SiC , , . SiC , SiC . : SiC ; ; :TF062 : A : 1671- 0924( 2008) 11- 0042- 05 Finite Element Analysis and Simulation Study on Temperature Field of Silicon Carbide Single Crystal Growth Furnace XU Wei, LIU Xueji o ( College of Science, T iyu n University of Technology, T iyu n 030024, Chin ) Abstract: Temper ture field of SiC single cryst l growth furn ce is studied using finite element n lysis, nd numeric l simul tion softw re is used to simul te temper ture distribution of SiC single cryst l growth furn ce. The simul ted di gr m of temper ture distribution is obt ined. The l ws of temper ture distribu tion in the furn ce re studied, nd the specific methods to regul te the temper ture field of silicon c rbide growth re put forw rd. Key words: SiC single cryst l; temper ture field; finite element n lysis , Si ( physic l v por tr nsport, SiC . SiC PVT) , Lely ( Modified Lely methods) . PVT SiC , , , , , , . SiC SiC . SiC , . SiC : 2008- 08- 22 : ( 1983 ) , , , . 徐 伟, : SiC 单晶生长炉温度场有限元分析及模拟 43 . , 100 h, , SiC 2 SiC , ,