元器件55N03.pdf

Spec. No. : C411J3 CYStech Electronics Corp. Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25V MTN55N03J3 ID 55A RDSON 6m Ω Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN55N03J3 TO-252 G ：Gate G D S D ：Drain S ：Source Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @VGS=10V, TC=25°C ID 55 A Continuous Drain Current @VGS=10V, TC=100°C ID 35 A Pulsed Drain Current IDM 215 *1 A Total Power Dissipation (TC=25℃) Pd 62.5