Evaluation scheme for the design of high power single mode verticalcavity surfaceemitting.pdf

Evaluation scheme for the design of high power single mode vertical-cavity surface-emitting lasers Young-Gu Ju KyungPook National University, Sangyeok, Daegu 702-701 Korea ygju@knu.ac.kr Abstract: A very simple and efficient evaluation procedure is suggested for the design of high power single mode VCSELs by reviewing the physical mechanisms that governs mode transition and simplifying the computation steps. In addition, the new structures are proposed and tested following the suggested evaluation procedure. As a result, the proposed design exhibits much better stability of the fundamental mode over a current range wider than the conventional one. 2003 Optical Society of America OCIS codes: (140.3430) Laser theory; (140.5960) Semiconductor lasers References and links 1. C. Jung, R. Jager, M. Grabherr, P. Schweitzer, R. Michalzik, B. Weigl, S. Muller, and K. J. Ebeling, “4.8 mW single mode oxide confined top surface emitting vertical cavity laser diodes,” Electron. Lett. 33, 1790- 1791 (1997). 2. H. Unold, S. W. Mahmoud, F. Eberhard, R. Jaeger, M. Kicherer, F. Mederer, M. C. Riedl, and K. J. Ebeling, “Large-area single-mode selectively oxidized VCSELs: Approaches and Experimental,” Proc. SPIE, 3946, 207-218 (2000). 3. K. D. Choquette, A. A. Allerman, K. M. Geib, and J. J. Hindi, Lithographically-defined gain apertures within selectively oxidized VCSELs, in CLEO Tech. Dig. 2000, 232-233 (2000), 4. Y. A. Wu, G. S. Li, R. F. Nabiev, K. D. Choquette, C. Caneau, and C. J. Chang-Hasnain, “Single-mode, passive antiguide vertical cavity