BAS40-04 丝印44 肖特基二极管选型手册.pdf

【领先的片式无源器件整合供应商—南京南山半导体有限公司】 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING ：44 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 40 V DC blocking voltage VR Forward continuous current IFM 200 mA Power dissipation PD 200 mW Thermal resistance junction to ambient RθJA 500 ℃/W Junction temperature T 125 ℃ J Storage temperature range TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) IR= 10μA 40 V Reverse voltage leakage current I