MOSFET与IGBT驱动电路的研究与设计.PDF

本文引用格式：胡涛，唐勇奇，黄林森，等．MOSFET 与 IGBT 驱动电路的研究与设计 [J]．新型工业化，2015，5(3)：11-19 DOI： 10.3969/j.issn.2095-6649.2015.03.02 MOSFET 与 IGBT 驱动电路的研究与设计 胡涛 1 ，唐勇奇 2 ，黄林森 1 ，林轩 2 ，陈丽娟 2 (1. 湖南工业大学 电气与信息学院，株洲 412007；2. 湖南工程学院 电气信息学院，湘潭 411101) 摘　要：目前在桥式电路中上桥臂的驱动电路常采用自举驱动，由于各桥臂使用的是同一组电源因此 相互之间存在着干扰，当参数选取不够合理时还会出现较高的电压尖峰损坏驱动芯片和开关管，在对驱 动电路要求严格的场合通常需要为每个桥臂提供独立电源。目前市场上隔离 DC/DC 的产品较多，但专门 为隔离驱动而设计的隔离 DC/DC 产品还比较少。通过对功率 MOSFET 和 IGBT 开通特性和关断特性的研 究，得出了功率 MOSFET 和 IGBT 对驱动电路的要求。设计了一种带隔离 DC/DC，适用于功率 MOSFET 和 IGBT 隔离驱动电路。并通过实验测试了该驱动电路的性能。 关键词：隔离 DC/DC；IGBT；MOSFET；隔离驱动电路 MOSFET and IGBT Driver Circuit Research and Design 1 2 1 2 2 HU Tao , TANG Yongqi , HUANG Linsen , LIN Xuan , CHEN Lijuan (1. School of Electrical and Information Engineering, Huan University of Technology , Zhuzhou 412007, China 2. School of ; Electrical and Information Engineering, Hunan Institute of Engineering , Xiangtan 411101, China) Abstract: At present, the upper arm drive circuit in the bridge circuit is often used bootstrap drive, besause of each arm using the same set of power. Accordingly there is therefore interfere with each other, while parameter selection is not reasonable when there will be higher voltage spikes damage the driver chip and switch, the drive circuit in demanding situations usually require separate power supply for each leg. Currently on the market isolation DC / DC more products, but designed specifically for isolated drive isolated DC / DC products is still relatively small. Through the study of the power MOSFET and IGBT turn-off characteristics and properties, obtained power MOSFET and IGBT drive circuits. Designed a isolated DC / DC, suitable for power MOSFET and IGBT driver circuit isolation. By experimental tests the performance of the drive circu