从芯片上看内存大小（Memory size on a chip）.doc

从芯片上看内存大小（Memory size on a chip） HY (modern HYNIX) Hyundai is a famous memory production plant in South Korea, and its products are also very large in China. HY coding rules: HY 5X X XXX XX X X X x-xx XX 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 Definition: 1. HY represents modern. 2, usually 57, representing SDRAM. 3. Process: the blank is 5V, V is 3V, and U is 2.5v. 4. Memory unit capacity and refresh unit: 16:16 M4K refresh; 64:64M, 8K refresh; 65:64M, 4K refresh; 128:128M, 8K refresh; 129:128M, 4K refresh. 5. Data bandwidth: 40:4, 80:8, 16:16, 32:32. Chips: 1, 2 BANK, 2, 4 BANK; When BANK; I/O interface: usually 0 8. Product line: from a-d series Power: white space is normal, L is low power consumption. 10. Encapsulation: usually TC (TSOP) 11. Speed: 7:7 NS, 8:8 NS, 10P: 10NS (CL2 3), 10S: 10 NS, (PC100, CL3), 10:10 NS, 12:12NS, 15:15 NS Kingston KVR * * * * * * * * * * * * * * 1, 2, 3, 4, 5, 6, 7, 8 1. KVR represents Kingston value RAM 2. External frequency 3. Generally X 4.64 is not ECC; 72 stands for ECC 5. There are S characters for notebook special memory, no S characters for common desktop or server memory 6.3: CAS = 3; 2.5: CAS = 2.5; 2: CAS = 2 7. Separator 8. Memory capacity We use the Kingston ValueRAM DDR memory code as an example: the memory is the memory of the value of the value of ValueRAM kvr400x64c25/256, which is the 256M memory of CAS = 2.5, which is not in the ECC calibration of the 400MHZ of the Kingston ValueRAM LGS (LG Semicon) LGS memory coding rules: GM 72 X XX XX X X X X X X XXX 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 Definition: 1. GM represents LGS company. 2, 72 stands for SDRAM. 3. V stands for 3V voltage. 4. Memory unit capacity and refresh unit: 16:16 M, 4K refresh; 17:16 M, 2K refreshing; 88m, 4K refresh; 64:64M, 16K refresh. 66:64M, 4K refresh. 5. Data bandwidth: 4:4, 8-8, 16:16, 32:32. 6. Chip composition: 1:1 BAND, 2:2 BANK, 4:4 BANK, 8:8 BANK 7. I/O interface: generally 1 8. Product series: from A to F. 9. Power consumption: white space i