直拉式单晶硅生长炉的关键技术研究的开题报告.docx

直拉式单晶硅生长炉的关键技术研究的开题报告 摘要 单晶硅被广泛用于太阳能电池、LED等领域，其质量的优劣直接影响到器件的性能和成本。直拉式单晶硅生长炉是当前单晶硅生产中常见的设备之一，具有高效、稳定、自动化程度高等优点。然而，单晶硅生长炉的关键技术仍然存在许多问题，如杂质控制、成品率提升、搭扣控制等。 本文旨在对直拉式单晶硅生长炉的关键技术进行研究，包括杂质控制、成品率提升、搭扣控制等方面，并提出相应的解决方案。首先，介绍直拉式单晶硅生长炉的基本原理和结构组成。然后，分析当前存在的生产问题，并针对性地提出解决方案。最后，通过实验验证和数值模拟等方法，验证方案的可行性和有效性。 关键词：直拉式单晶硅生长炉；关键技术；杂质控制；成品率提升；搭扣控制 Abstract Single crystal silicon is widely used in solar cells, LED and other fields. The quality of single crystal silicon directly affects the performance and cost of devices. The direct pulling type single crystal silicon growth furnace is one of the common equipment in the production of single crystal silicon at present, which has the advantages of high efficiency, stability, automation and so on. However, there are still many problems in the key technology of single crystal silicon growth furnace, such as impurity control, yield improvement, clamp control, etc. This paper aims to study the key technology of direct pulling type single crystal silicon growth furnace, including impurity control, yield improvement, clamp control and so on, and put forward corresponding solutions. Firstly, the basic principle and structure composition of the direct pulling type single crystal silicon growth furnace are introduced. Then, the existing production problems are analyzed and corresponding solutions are put forward. Finally, the feasibility and effectiveness of the scheme are verified by experimental verification and numerical simulation. Keywords: direct pulling type single crystal silicon growth furnace; key technology; impurity control; yield improvement; clamp control