化学气相沉积法制备Sn2S3一维纳米结构阵列.pdf
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Preparation of Sn2S3 One-Dimensional
Nanostructure Arrays by Chemical Vapor
Deposition
Article in AC A PHYSICO-CHIMICA SINICA · May 2011
DOI: 10.3866/PKU.WHX
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Kuo Hai Dongsheng ang
Hunan Normal University Hunan Normal University
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物理化学学报(Wuli Huaxue Xuebao)
May Acta Phys. -Chim. Sin. 2011, 27 (5), 1249-1253 1249
[Article]
化学气相沉积法制备Sn S 一维纳米结构阵列
2 3
彭跃华 周海青 刘湘衡 何熊武 赵 丁 海 阔
周伟昌 袁华军 唐东升*
(湖南师范大学低维量子结构与调控教育部重点实验室, 物理与信息科学学院, 长沙410081)
摘要: 运用化学气相沉积法(CVD), 直接以Sn 和S 为原料分区加热蒸发, 通过控制温度分布、气压、载气流量
和金属铅纳米颗粒分布等宏观实验条件, 成功制备大面积Sn S 一维纳米结构阵列. 扫描电子显微镜(SEM) 图
2 3
片显示: Sn S 一维纳米结构的横向尺度在100 nm 左右, 长约几个微米. X射线衍射(XRD )谱显示: 所制备样品
2 3
的晶体结构属于正交晶系, 沿[002]方向生长. 紫外-可见
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