合成温度对碳热还原法合成碳化硅晶须形貌的影响.pdf

39 2 人 工 晶 体 学 报 Vo.l 39 No. 2 2010 4 JOURNAL OF SYNTHET IC CRYSTALS April, 2010 张 颖, 蒋明学, 张军战 ( , 7100 ) : S iO , , , 1 00 1 0 1600 2 S iC , , S iC, : 1 00 , SiC, ; 1 0 , , S iC, VLS, 1 0 , S iC VS : ; S iC; ; : TQ0 0. 4+ 3 : A : 100098 X( 2010) Effect of SynthesisTemperature onMorphology of SiCWhiskers by CarbothermalReductionMethod ZHAN G Ying, JIAN G M ing xue, ZHAN G Junzhan ( School ofM aterials Science and Eng ineering, XianU niversity ofArchitecture Technology, X ian 7100 , China) (R eceived 26 October 2009, a ccep ted 13 January 2010 Abstract: SiC w h iskers w ere synthesized respectively at 1 00 , 1 0 , 1600 by carbothermal reduction method, using m icrosilica as silica source, black carbon as carbon source, asw ell as boron oxide as catalyst. The synthesized SiC wh iskersw ere characterized by SEM, EDS andTEM. The effect of synthesis temperature on the morphology of SiC wh iskers w as studied and growth m echanism w as discussed. The resu lts show that bambooshaped SiC w hiskers are synthesized at 1 00 . Planar defects such as tw ins appeared period ically along the grow th direction of SiC wh iskers are observed by means of SAED. The amounts of dumbbellshaped SiC w hiskers increase rapidly w ith the elevating of synthesis temperature above 1 0 , and the beading ball is determ ined to be SiC. Molten catalytic drop lets observed on the top of SiC wh iskersmean that the growth of the SiC wh iskers belongs to VLSm echanism. A t the same tmi e, there are dumb