基于阳极键合干法刻蚀技术隧道加速度计加工及测试.pdf

第25卷第12期学报Vol.25,No.12

2004年12月JOURNALOFSEMICONDUCTORSDec.,2004

FabricationandCharacterizationofTunnelingCurrentof

AnodicBondedDry-EtchedMEMS

TunnelingAccelerometer

DongHaifengHaoYilongJiaYubinYanGuizhenWangYingandLiTing,,,,

(NationalKeyLaboratoryofNanoMicroFabricationTechnologyInstituteofMicroelectronics/,,

PekingUniversity,Beijing100871,)

:Atunnelingaccelerometerisfabricatedandcharacterizedbasedontheextensionofthesilicon-glassanod-

-.

icbondinganddeepetchingreleasingprocessprovidedbyPekingUniversityThetunnelingcurrentunderopen

loopoperationistestedintheairbyHP4145Bsemiconductoranalyzer,whichverifiesthepresenceoftunnelingcur-

rentandtheexponentialrelationshipbetweentunnelinggapandtunnelingcurrent.Thetunnelingbarrieritrap-

1.1822.177.14～16.

olatedtobefromtoeVThethresholdvoltagesaretestedtobeVformostofthedevicesThe

thresholdvoltagesunder-1,0,and+1garetested,respectively,whichshowsthesensitivityoftheaccelerometer

isabout87mV/g.

KeywordstunnelingeffectaccelerometerMEMS:;;

EEACC:0580;7280;2575

CLCnumber:TN304Documentcode:AArticleID:0253-4177(2004)12-1606-06

poxybondinginRefs.[3,7,8,12]makesiteasyto

-.

1IntroductionvolumeproduceICPtech