低铅压电陶瓷的制备与其介电压电性能研究.pdf

V01．40 第40卷增刊 电子科技大学学报 Suppl． Journal ofElectronicand ofChina 2011伍4,q ofUniversity ScienceTechnology Apr．2011 低铅压电陶瓷的制备与其介电压电性能研究 李紫源，何子均，肖定全，吴文娟，朱建国 (四川大学材料科学与工程学院成都610064) 低铅压电陶瓷；研究了组分比蹄烧结温度对该陶瓷体系介电和压电性能的影响．XRD分析表明，随着烧结温度的升高，陶瓷 好的介电压电性能，在间．75，烧结温度为l 250℃时。如=182pC小，蔚-34．5％，居里温度为165℃． 关键词介电性能；KNN；PZT；Pb(MnI／3Sbw)O,：压电性能 中图分类号048 文献标识码A doi：10．3969／j．isan．100l-0548．2011．z1．003 andElectric ofLow—Lead Preparation Properties mics PiezoeIectricCera LI Zi-yuan，HEZi-jun,XIAODing-quan。WUWen-juan，and删Jian-guo ofMaterialsScience end (College Engineemg,SichuanUnivet3ityChmgdu610064) Abstract low·lead ceramics the withJand were conventionalceramicsfabrication preparedbyusing technique．Theproperties reSUIts transformfroma wercstudied．Theshowthatthe oftheceramics sinteringtemperature crystallinephases statewith andorthorhombicstructureto structurewhen coexisting pyrochlore pcrvoskite puretetragonalpervoskite Nceramics dielectricand increases,and矗叶ⅥS-(1—崔)KNI sinteringtemperature possessgood piezoelectric x=0．75 sinteredatl 250℃． ceramicswith properties：the possessd33=182pC／N，萨34．5％，and孕165℃when wordsdielectric Key