多晶硅铸锭石英坩埚和氮化硅涂层的研究毕业设计.doc

多晶硅铸锭石英坩埚和氮化硅涂层的研究 摘 要 在多晶硅生产工艺中作为多晶硅铸锭关键的辅助材料石英坩埚和氮化硅辅材内的杂质含量不仅影响着多晶硅的少子寿命而且会影响着硅锭的脱模效果原则上讲使用纯度越高的辅材其铸锭质量就越好但在实际生产中过高追求质量往往会增大投入企业真正追求的是投入产出比本文主要研究不同辅材对铸造多晶硅锭性能的影响一方面对铸锭辅材生产厂家的产品开发或产品升级具有一定的指导意义另一方面提示多晶硅铸锭厂家应根据不同辅材开发不同的工艺有助于生产高质量的多晶硅锭同时也降低了生产成本提高企业生产效益 本利用微波光电导衰减仪 μ-PCD 红外扫描仪 SIRM 等测试方法对铸造多晶硅中的杂质以及少子寿命的分布特征进行了系统的研究Quartz Crucible and Silicon Nitride Coating for Casting Polycrystalline silicon ABSTRACT In the polysilicon production processas much crystal ingot casting key auxiliary materials quartz crucible and Si3N4the content of impurities not only affects the minority carrier lifetime of silicon ingotalso affects patterns effect of silicon ingotIn principlethe higher purity speak the complementary material usingthe better the quality of its silicon ingotsbut in actual production high quality tends to increase investment pursuitto enterprise the input-output ratioThis paper mainly studies different complementary material of casting polycrystalline silicon ingotson the one hand the influence on the performance of the bubble complementary material manufacturer in the product development or product upgrades has certain directive significanceon the other hand many crystal ingot casting factory should develop different technology according to different auxiliary materialshelps to manufacture high quality polycrystalline silicon ingot also reduces production cost improves production efficiency In this workthe shade of impurities in casting polycrystalline silicon as well as their impacts on the minority carrier lifetime in mc-si ingots have been systematically studied by means of Microwavephoto Conductive Decay μ-PCD Scanning Infrared Microscopy SIRM Study found that Si3N4 particle specific surface areagoing against the silicon ingots demoulding smoothlyUsing the quartz crucibles and the silicon nitride from the different manufacturerthe length of red zone at the bottom of the silicon ingots is different obviouslyThe minority carrier lifetime a