24C02存储器I2C.pdf

24C01SC/02SC 2 1K/2K 5.0V I C Serial EEPROMs for Smart Cards FEATURES DIE LAYOUT • ISO Standard 7816 pad locations VSS • Low power CMOS technology - 1 mA active current typical VCC - 10 µA standby current typical at 5.5V • Organized as a single block of 128 bytes (128 x 8) or 256 bytes (256 x 8) SDA 2 • Two-wire serial interface bus, I C compatible • 100 kHz and 400 kHz compatibility DC SCL • Self-timed write cycle (including auto-erase) • write buffer for up to 8 bytes • 2 ms typical write cycle time for write BLOCK DIAGRAM • ESD protection 4 kV • 1,000,000 E/W cycles guaranteed • Data retention 200 years HV GENERATOR • Available for extended temperature ranges - Commercial (C): 0°C to +70°C I/O MEMORY EEPROM CONTROL CONTROL ARRAY DESCRIPTION LOGIC LOGIC XDEC