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Trends in RD in TSV Technology for 3D LSI (趋势在TSV 3 d LSI技术的研发).pdf

发布:2017-08-31约7.4万字共14页下载文档
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S C I E N C E T E C H N O L O G Y T R E N D S 2 Trends in RD in TSV Technology for 3D LSI Packaging Takashi YOSHINAGA Information and Communications Unit Minoru NOMURA Affiliated Fellow 3D packaging technology uses wire bonding with fi ne 1 Introduction metal lead wires. Recently, novel technologies have been developed to replace wire bonding. For example, Small, high-speed, and multi-functional computers wireless connection for data communication, which and other electronic devices have been enabled by will reduce the space needed for wiring, has been high integration technologies that have come to reality proposed.[1-4] Another example is through-silicon via by the miniaturization through the LSI process scaling packaging technology[5-7] (hereinafter, referred to as which uses a very fine pattern. However, an upper TSV technology), which uses through-holes in silicon limit in the progress of such miniaturization has come substrate for electrical connection. By using TSVs, it into sight. The miniaturization will be technologically is possible to save the space that would be necessary limited due to the increase of leak current wh
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