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笔记本维修十电源管微型器件nds9933.pdf

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May1996

N

NDS9933

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescriptionFeatures

TheseP-Channelenhancementmodepowerfieldeffect-3.2A,-20V.RDS(ON)=0.11@VGS=-4.5V

transistorsareproducedusingNationalsproprietary,highcellR=0.15@V=-3.0V

DS(ON)GS

density,DMOStechnology.ThisveryhighdensityprocessisR=0.19@V=-2.7V.

especiallytailoredtominimizeon-stateresistanceandprovideDS(ON)GS

superiorswitchingperformance.ThesedevicesareparticularlyHighdensitycelldesignforextremelylowRDS(ON).

suitedforlowvoltageapplicationssuchasnotebookcomputer

powermanagementandotherbatterypoweredcircuitswhereHighpowerandcurrenthandlingcapabilityinawidelyused

fastswitching,lowin-linepowerloss,andresistancetosurfacemountpackage.

transientsareneeded.

DualMOSFETinsurfacemountpackage.

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