IRFP460详细资料.pdf
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IRFP460
N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247
PowerMESH MOSFET
TYPE VDSS RDS(on) ID
IRFP460 500 V 0.27 Ω 20 A
TYPICAL RDS(on) = 0.22 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION 3
2
This power MOSFET is designed using the 1
company’s consolidated strip layout-based MESH
TO-247
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (VGS = 0) 500 V
V DGR Drain- gate Voltage (RGS = 20 kΩ ) 500 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 o C 20 A
ID Drain Current (continuous) at Tc = 100 oC 13 A
IDM (•)
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