FDT86244 PDF规格书.pdf
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FDT86244
N-Channel Enhancement MOSFET
■Features
● VDS (V) = 150V
● ID = 2.8 A (VGS = 10V)
● RDS(ON) ＜285m Ω(VGS = 10V)
● RDS(ON) ＜305m Ω(VGS = 6V)
1.Gate
2.Drain
3.Source D
4.Drain
G D S
■Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 150
V
Gate-Source Voltage VGS ±20
Ta=25℃(Note.1) 2.8
Continuous Drain Current ID A
12
Ta=25℃(Note.1) 2.2
Power Dissipation PD W
Ta=25℃(Note.2) 1.0
Single Pulsed Avalanche Energy (Note.3) EA S
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