高频信号传输特性与电路量测精要.ppt

RF (Gigahertz) ATE Production Testing on Wafer: Options and Tradeoffs Presented by Dean A Gahagan Marketing Manager Pyramid Probe Division Cascade Microtech, Inc Purpose Purpose is to describe practical HW options for production on-wafer RF test and to compare these options with respect to RF Performance and Production worthiness Outline Why RF test on-wafer? Typical RF and IF measurements required on a RF device Production RF testers available Tester to probe card Interfaces Probe cards Calibration Probe stations Conclusion Typical ATE Wafer probing Configuration Tester Docking Head Probe Card and Interface Wafer Probe Station Why RF test on-wafer? Discover wafer process influences to the RF performance at wafer level . Immediate Process feedback Perform device RF performance validation as soon as silicon is available. Known Good Die (KGD) delivery to customers demands full performance test at wafer. Advanced packaging methods like flip-chip require RF wafer probing. Complimentary testing between probe and final test improves test efficiency and reduces cost. Typical RF and IF measurements AM-PM conversion (static) Adjacent channel power Complex demodulation Digital input-threshold voltage Digital output levels Efficiency (RF out/DC in) Frequency cw vs time (tune drift) Gain or loss vs control voltage or digital state Gain compression Pout @ N dB, saturation Harmonic distortion dBc SOI, TOI I/Q modulator imbalance (static) amplitude phase error I/Q modulator suppression carrier unwanted sideband Typical RF and IF measurements Isolation Minimum detectable signal Mixer conversion gain or loss Mixer leakages LO--RF, LO--IF, carrier feed through Noise figure Nth order intermodulation two-tone IP3, IP5 Phase noise/jitter (cw) modulated Power (dBm) output power vs bias voltage Pulsed RF measurements frequency power S-parameters Pulsed RF profile signal overshoot ringing RF rise time (10% to 90%) S-parameters gain/loss isolation, match, VSWR, gamma Typical RF