半导体封装制程与设备材料知识介绍汇总.ppt

pad lead pad lead pad lead pad lead Disconnection of the tail pad lead Disconnection of the tail pad lead Formation of a new free air ball 焊线(Wire Bond) 2.Wire Bond 相关材料 Leadfram Capillary Gold Wire Leadfram Capillary Capillary Manufacturer (SPT, GAISER, PECO, TOTO…) Capillary Data ( Tip , Hole , CD , FAOR , IC ) TIP ..…… Pad Pitch Pad pitch x 1.3 = TIP Hole ..…. .Wire Diameter Wire diameter + 0.3~0.5 = H CD………Pad size/open/1st Ball CD + 0.4 ~ 0.6 = 1st Bond Ball size FA OR….Pad pitch(um) FA 100 0,4 ~90/100 4,8,11 90 11,15 IC type …… loop type Capillary Gold Wire Gold Wire Manufacturer (Nippon , SUMTOMO , TANAKA…. ) Gold Wire Data ( Wire Diameter , Type , EL , TS) 焊线(Wire Bond) 3.Wire Bond 辅助设备 A Microscope 用于测loop height B Wire Pull 拉力计（DAGE4000） C Ball Shear 球剪切力计 D Plasma 微波/等离子清洗计 Ball Size Ball Thickness 單位: um，Mil 量測倍率: 50X Ball Thickness 計算公式 60 um BPP ≧ 1/2 WD=50% 60 um BPP ≦ 1/2 WD=40%~50% Ball Size Ball Size Ball Thickness Loop Height 單位: um，Mil 量測倍率: 20X Loop Height 線長 Wire Pull 1 Lifted Bond (Rejected) 2 Break at neck (Refer wire-pull spec) 3 Break at wire ( Refer wire-pull spec) 4 Break at stitch (Refer stitch-pull spec) 5 Lifted weld (Rejected) Ball Shear 單位: gram or g/mil2 Ball Shear 計算公式 Intermetallic（IMC有75%的共晶,Shear Strength標準為＞6.0g/mil2。 SHEAR STRENGTH＝Ball Shear/Area (g/mil2) Ball Shear = x; Ball Size = y; Area = π(y/2) 2 x/π(y/2) 2 = z g/mil2 Plasma Cleaning的原理： Plasma的产生： 电极(电能) Plasma 气 体 (O2,H2,He,Ar..) Vacuum Chamber Organic Plasma PCB Substrate Die + + + + + + + + + + + + + Electrode + Plasma Cleaning机理: 等离子工艺Plasma Process 气相---固相表面相互作用 Gas Phase - Solid Phase Interaction Physical and Chemical 分子级污染物去除 Molecular Level Removal of Contaminants 30 to 300 Angstroms 可去除污染物包