掺杂剂种类对大直径直拉硅单晶中void微缺陷的影响.pdf

396 () Vol.396 2006 12 A cta S cientiarum N aturalium Universitatis N ankaiensis Dec.2006 : 0465-7942(2006) 06-0064-04 void 1, 2 2 2 2 1 郝秋艳 ,　孙文秀 ,　刘彩池 ,　张建强 ,　姚素英 ( 1. , 300072; 2. , 300130 ) : . , , , , . , , FPDs Ar void . , N2 B O2 FPDs Sb O2 FPDs . : ZSi; ; FPDs; : TN304. 01: A 0 , 3 4 , , (ULSI) .2010 , 0.07 m, 2015 25 nm. . , , . , , . , ULSI 1/ 3 , , . . 100 nm , ULSI , DRAM (GOI) , LO OS(local oxidation of silicon) . [ 1] () [ 2] ( ) [ 3] ( ) Void OPs FPDs LST Ds ., (GOI) , . void , void , . void . 1 , 150 mm, 100 , 0. 81. 1mm min/ .1 195 , 1. : 2006-05-20 :( 2005000057) ; (043602511) ;( 2004311) E :( 1972- ) , , , . 6 :void 65 1 Table 1The parameters and annealing project of wafers - 1 - 1 / ( cm ) / (mg L ) RT A / s 2. 63. 0 2130 60120180300500 B Ar N2 O2 P 2. 74. 0 2430 Ar 60120180300 B 0. 0040. 007 2429 Ar 60120180300 As 0. 035 2430 Ar 60120180300 0.010. 03 24. 432. 1 60120180300500