005 van der Waals Epitaxial Growth of英文教材.pdf
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van der Waals Epitaxial Growth of
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Graphene on Sapphire by Chemical Vapor C
Deposition without a Metal Catalyst L
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Jeonghyun Hwang,†,) ,* Moonkyung Kim,†,) Dorr Campbell,† Hussain A. Alsalman,† Joon Young Kwak,†
Shriram Shivaraman,† Arthur R. Woll,‡ Arunima K. Singh,§ Richard G. Hennig,§ Sandeep Gorantla,^
Mark H. Rummeli,^ and Michael G. Spencer†
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†School of Electrical and Computer Engineering, ‡Cornell High Energy Synchrotron Source (CHESS), and §Department of Materials Science Engineering, Cornell
University, Ithaca, New York 14853, United States and ^Leibniz-Institute for Solid State and Materials Research, IFW Dresden, 01069 Dresden, Germany. ) These
authors contributed equally to this work.
ABSTRACT van der Waals epitaxial growth of graphene on
c-plane (0001) sapphire by CVD without a metal catalyst is p
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